Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range-Reference-Cited by-同舟云学术

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Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

Published:2014-02-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI
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Author:

Semenova E. S.,Kulkova I. V.,Kadkhodazadeh S.,Barettin D.,Kopylov O.,Cagliani A.,Almdal K.,Willatzen M.,Yvind K.

Publisher

SPIE

Reference26 articles.

1. Simultaneous two-state lasing in quantum-dot lasers

2. Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures;Yvind,2008

3. Quantum-Dot Semiconductor Optical Amplifiers;Akiyama,2007

4. High-Speed Mode-Locked Quantum-Dot Lasers and Optical Amplifiers;Kuntz,2007

5. InGaAs Quantum-Dot Mode-Locked Laser Diodes

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1. Strain and piezoelectric control of electronic and photonic properties of p − n diodes;Journal of Physics D: Applied Physics;2024-06-05

2. Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire;Nanomaterials;2023-05-25

3. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs;Nanomaterials;2023-04-14

4. Electromechanically Coupled III-N Quantum Dots;Nanomaterials;2023-01-05

5. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography;Materials;2021-01-14

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