Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire-Reference-Cited by-同舟云学术

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

Published:2023-05-25 Issue:11 Volume:13 Page:1737
ISSN:2079-4991
Container-title:Nanomaterials
language:en
Short-container-title:Nanomaterials

Author:

Barettin Daniele¹^ORCID,Shtrom Igor V.²^ORCID,Reznik Rodion R.²³⁴^ORCID,Cirlin George E.²³⁴⁵^ORCID

Affiliation:

1. Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy

2. Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia

3. Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

4. Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia

5. Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia

Abstract

We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

Funder

ATHENA-European University

Ministry of Science and Higher Education of the Russian Federation

St. Petersburg State University

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Link

https://www.mdpi.com/2079-4991/13/11/1737/pdf

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