Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1938271
Reference20 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
4. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots
5. Effects of substrate doping and surface roughness on self-assembling InAs/InP quantum dots
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