In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption-Reference-Cited by-同舟云学术

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In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption

Published:1992-12-15 Issue:Part 1, No. 12A Volume:31 Page:3988-3994
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Yasuyuki,Kobayashi Naoki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures;Surfaces and Interfaces;2024-10

2. Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers;Applied Physics Letters;2023-01-30

3. Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2019-03

4. Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics;Nanotechnology;2013-05-23

5. Surface passivated InAs/InP core/shell nanowires;Semiconductor Science and Technology;2010-01-22

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