InAs/InP quantum dots stacking: Impact of spacer layer on optical properties
Author:
Affiliation:
1. iPhotonics Laboratories, Department of Electrical and Computer Engineering, Concordia University, Montreal, Québec H3G1M8, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5082722
Reference57 articles.
1. Interaction of self-assembled InAs/InGaAsP/InP (001) quantum dots
2. The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
3. A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness
4. Closely stacked InAs/GaAs quantum dots grown at low growth rate
5. Strain-induced material intermixing of InAs quantum dots in GaAs
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