A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness
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SPIE
Reference11 articles.
1. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
2. Strain effect in determining the geometric shape of self-assembled quantum dot
3. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
4. Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures
5. Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
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1. Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures;Journal of Crystal Growth;2021-02
2. A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures;Journal of Alloys and Compounds;2020-12
3. Tuning the structural and optical characteristics of heterogeneously coupled InAs Submonolayer (SML) quantum dots grown on InAs Stranski-Krastanov (SK) quantum dots;Optical Materials;2020-11
4. Effect of ex-situ annealing on coupled hybrid InAs Stranski-Krastanov (SK) on Submonolayer (SML) Quantum Dot heterostructures with different spacer layer thickness;Low-Dimensional Materials and Devices 2020;2020-08-21
5. Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1ML/sec) and lower (0.05ML/sec) growth rates;Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII;2020-03-02
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