Author:
Samesta ,Saha Jhuma,Tongbram Binita,Panda Debiprasad,Das Debabrata,Chakrabarti Subhananda
Funder
DST Nano Mission
SERB
DST-SERI
Indian Space Research Organization
Department of Information and Technology
Center of Excellence in Nanoelectronics
National Center of Excellence in Technology for Internal Security
Indian Institute of Technology Bombay Nanofabrication Facility
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Cited by
13 articles.
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1. Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs);Physics and Simulation of Optoelectronic Devices XXXII;2024-03-11
2. A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction;Journal of Crystal Growth;2024-03
3. Design of a Frequency Multiplier Based on Laterally Coupled Quantum Dots for Optoelectronic Device Applications in the Terahertz Domain: Impact of Inhomogeneous Indium Distribution, Strain, Pressure, Temperature, and Electric Field;Journal of Electronic Materials;2024-02-15
4. Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate;Infrared Sensors, Devices, and Applications XIII;2023-10-10
5. Tailoring of the nonlinear optical rectification in vertically and laterally coupled InxGa1-xAs/GaAs quantum dots for Tera-hertz applications: Under In/Ga inter-diffusion, indium segregation, and strains effects;Results in Physics;2023-05