Strain-induced material intermixing of InAs quantum dots in GaAs-Reference-Cited by-同舟云学术

Strain-induced material intermixing of InAs quantum dots in GaAs

Published:2000 Issue:12 Volume:77 Page:1789
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lipinski M. O.,Schuler H.,Schmidt O. G.,Eberl K.,Jin-Phillipp N. Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference15 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots

3. M. O. Lipinski, N. Y. Jin-Phillipp, O. G. Schmidt, and K. Eberl, Proceedings of the 12th International Conference on Indium Phosphide and Related Materials IPRM00, Williamsburg, VA, 14–18 May 2000.

4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

5. Prevention of gain saturation by multi-layer quantum dot lasers

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