Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters-Reference-Cited by-同舟云学术

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Published:2022-05-30 Issue:6 Volume:5 Page:8070-8079
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Gajjela Raja Sekhar Reddy¹^ORCID,Sala Elisa Maddalena²³^ORCID,Heffernan Jon²³,Koenraad Paul M.¹

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ, The Netherlands

2. EPSRC National Epitaxy Facility, The University of Sheffield, North Campus, Broad Lane, S3 7HQ Sheffield, United Kingdom

3. Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, S1 3JD Sheffield, United Kingdom

Funder

UK Research and Innovation

European Commission

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c01197

Reference57 articles.

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3. Sugawara, M.; Arakawa, Y.; Tanabe, K. Semiconductor Lasers; Elsevier: 2013; pp 272–315.

4. Submonolayer InGaAs/GaAs quantum dot solar cells

5. Quantum dot solar cells

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