Electrochemical etching of AlGaN for the realization of thin-film devices-Reference-Cited by-同舟云学术

Electrochemical etching of AlGaN for the realization of thin-film devices

Published:2019-10-28 Issue:18 Volume:115 Page:182103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bergmann Michael A.¹,Enslin Johannes²,Yapparov Rinat³^ORCID,Hjort Filip¹^ORCID,Wickman Björn⁴,Marcinkevičius Saulius³,Wernicke Tim²,Kneissl Michael²,Haglund Åsa¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden

2. Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany

3. Department of Applied Physics, KTH Royal Institute of Technology, 16440 Kista, Sweden

4. Department of Physics, Chalmers University of Technology, 41296 Gothenburg, Sweden

Funder

Deutsche Forschungsgemeinschaft Collaborative Research Center “Semiconductor Nanophotonics”

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Bundesministerium für Bildung und Forschung “Advanced UV for Life” project

Energimyndigheten

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120397

Reference21 articles.

1. A Brief Review of III-Nitride UV Emitter Technologies and Their Applications

2. The 2018 GaN power electronics roadmap

3. Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

4. Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

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