Structural characterization of SinC δ layers embedded in a silicon matrix
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360149
Reference6 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Si1-x-yGexCy growth and properties of the ternary system
3. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
4. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
5. Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures
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3. Carbon Doping of SiGe;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13
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