Novel Si–Ge–C superlattices and their applications

Author:

Augusto Carlos J.R.P.,Forester Lynn

Funder

NSF SBIR

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. 2013 ITRS Edition, http://www.itrs.net/Links/2013ITRS/2013Chapters/2013Overview.pdf, page 26, Table ORTC1.

2. Miller D.A.B, Device requirements for optical interconnects to silicon chips, In: Proceedings of the IEEE | Vol. 97, No. 7, July 2009; p. 1178. http://dx.doi.org/10.1109/JPROC.2009.2014298.

3. Prospect of Tunneling Green Transistor for 0.1V CMOS;Hu;IEDM Techn Digest 16.1.1–16.1.4 (IEEE, 2010),2010

4. Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors;Kotlyar;Appl Phys Lett,2013

5. Optical properties, germanium silicon: physics and materials;Cerdeira,1998

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