A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD-Reference-Cited by-同舟云学术

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

Published:2017-11-09 Issue:48 Volume:28 Page:485303
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Yamamoto Yuji^ORCID,Zaumseil Peter,Capellini Giovanni,Andreas Schubert Markus,Hesse Anne,Albani Marco,Bergamaschini Roberto,Montalenti Francesco,Schroeder Thomas,Tillack Bernd

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa91c1/pdf

Reference30 articles.

1. Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors

2. Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages

3. Properties and applications of SiGe nanodots

4. Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics

5. Novel Si–Ge–C superlattices and their applications

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2. Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy;Japanese Journal of Applied Physics;2024-02-16

3. Three-Dimensional Self-Ordered Multilayered Ge Nanodots on SiGe;ECS Journal of Solid State Science and Technology;2023-05-01

4. Heteroepitaxy of group IV materials for future device application;Japanese Journal of Applied Physics;2023-02-09

5. Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe;Japanese Journal of Applied Physics;2023-02-07