Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358826
Reference14 articles.
1. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
2. In-situ X-ray measurements of relaxation processes in Si1-xGex layers on si substrate
3. Effect of Carbon on the Lattice Parameter of Silicon
4. Lattice distortion in a strain-compensatedSi1−x−yGexCylayer on silicon
5. The absolute “lattice parameter” of crystals with defects measured with X-ray methods
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1. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06
2. Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates;Materials Science in Semiconductor Processing;2017-11
3. Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation;Thin Solid Films;2013-11
4. Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing;Journal of Alloys and Compounds;2013-03
5. Thermal instability of pseudomorphically strained phosphorus doped Si:C alloy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07
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