In-situ X-ray measurements of relaxation processes in Si1-xGex layers on si substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
3. An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy
4. X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates
5. Effect of thermal annealing on the Raman spectrum of Si1−xGexgrown on Si
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1. Determination of Germanium Content and Relaxation in Si1—xGex/Si Layers by Raman Spectroscopy and X-Ray Diffractometry;physica status solidi (a);1999-04
2. Simulation of the Process of Strain Relaxation in Si1—xGex/Si(100) Heterostructures;physica status solidi (a);1997-12
3. X-ray diffraction and x-ray photoelectron spectroscopy study of partially strained SiGe layers produced via excimer laser processing;Journal of Applied Physics;1997-07
4. Comparison of the thermal stability of Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si superlattice structures;Journal of Applied Physics;1997-05
5. The relaxation behavior of strained Si1−xGex layers at high temperature under hydrostatic pressure;Physica Status Solidi (a);1996-02-16
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