Effect of thermal annealing on the Raman spectrum of Si1−xGexgrown on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353864
Reference13 articles.
1. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
4. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
5. Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocations
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1. Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs.ab initiocalculations;Journal of Applied Physics;2017-02-28
2. GeSi Raman spectra vs. local clustering/anticlustering: Percolation scheme and ab initio calculations;Journal of Applied Physics;2013-07-21
3. Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing;e-Journal of Surface Science and Nanotechnology;2009
4. Laser annealing induced high Ge concentration epitaxial SiGe layer in Si1−xGex virtual substrate;Applied Physics Letters;2008-07-28
5. Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition;Journal of Applied Physics;2007-01
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