Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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4. Formation Mechanism of Self-Assembled Ge∕Si∕Ge Composite Islands
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06
2. On the doping limit for strain stability retention in phosphorus doped Si:C;Journal of Applied Physics;2014-07-21
3. Platinum silicide formation on Si1−yCy epitaxial layers;Journal of Alloys and Compounds;2013-10
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