On the doping limit for strain stability retention in phosphorus doped Si:C
Author:
Affiliation:
1. Department of Physics, National Central University, Jungli 32054, Taiwan
Funder
National Science Council Taiwan (NSC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4890303
Reference27 articles.
1. Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel
2. Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
3. Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
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1. Comprehensive Stress Effect of Thin Coatings and Silicon–Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate;Journal of Nanoscience and Nanotechnology;2020-02-01
2. Scaling and evolution of device architecture;CMOS Past, Present and Future;2018
3. Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy;ECS Journal of Solid State Science and Technology;2017
4. Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy;ECS Transactions;2016-08-25
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