Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation-Reference-Cited by-同舟云学术

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Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

Published:2013-11 Issue: Volume:546 Page:226-230
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim S.-W.,Yoo J.-H.,Koo S.-M.,Lee H.-J.,Ko D.-H.

Funder

MKE

MKE/KEIT

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

2. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation;Thin Solid Films;2020-09

2. Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers;Journal of Alloys and Compounds;2019-06

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