Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors-Reference-Cited by-同舟云学术

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Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Published:2005-02-28 Issue:9 Volume:86 Page:093102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ang Kah-Wee,Chui King-Jien,Bliznetsov Vladimir,Tung Chih-Hang,Du Anyan,Balasubramanian Narayanan,Samudra Ganesh,Li Ming Fu,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1871351

Reference6 articles.

1. Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

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