Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing-Reference-Cited by-同舟云学术

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Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing

Published:2020-12 Issue: Volume:120 Page:105282
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Komago Shota,Yokogawa Ryo,Yoshioka Kazutoshi,Borland John O.,Kuroi Takashi,Kawasaki Yoji,Ogura Atsushi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

4. Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content;Materials Science in Semiconductor Processing;2023-08

2. Theoretical investigation of the structural, electronic, optical, and elastic properties of the zinc blende SiGe1 − xSnx ternary alloy;Optical and Quantum Electronics;2023-07-05

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