Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content-Reference-Cited by-同舟云学术

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Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content

Published:2023-08 Issue: Volume:163 Page:107549
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Frauenrath M.,Acosta Alba P.,Concepción O.,Bae J.-H.,Gauthier N.,Nolot E.,Veillerot M.,Bernier N.,Buca D.,Hartmann J.-M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Room temperature optically pumped GeSn microdisk lasers;Chrétien;Appl. Phys. Lett.,2022

2. Up to 300 K lasing with GeSn-On-Insulator microdisk resonators;Bjelajac;Opt Express,2022

3. Electrically injected GeSn lasers on Si operating up to 100 K;Zhou;Optica,2020

4. Electrically injected GeSn lasers with peak wavelength up to 2.7 μm;Zhou;Photon. Res.,2022

5. Strain engineered electrically pumped SiGeSn microring lasers on Si;Marzban;ACS Photonics,2022

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically injected GeSn laser with stairs-structure based on SiN stressor;Optics Communications;2023-11

2. Advances in In Situ Boron and Phosphorous Doping of SiGeSn;ECS Journal of Solid State Science and Technology;2023-05-31

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