Electrically injected GeSn lasers on Si operating up to 100 K-Reference-Cited by-同舟云学术

Electrically injected GeSn lasers on Si operating up to 100 K

Published:2020-08-05 Issue:8 Volume:7 Page:924
ISSN:2334-2536
Container-title:Optica
language:en
Short-container-title:Optica

Author:

Zhou Yiyin^ORCID,Miao Yuanhao,Ojo Solomon^ORCID,Tran Huong,Abernathy Grey,Grant Joshua M.,Amoah Sylvester,Salamo Gregory,Du Wei^ORCID,Liu Jifeng,Margetis Joe,Tolle John,Zhang Yong-hang,Sun Greg,Soref Richard A.,Li Baohua,Yu Shui-Qing

Funder

Air Force Office of Scientific Research

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Si–Ge–Sn alloys: From growth to applications

2. Group IV Photonics: Driving Integrated Optoelectronics

3. Recent progress in GeSn growth and GeSn-based photonic devices

4. Mid-infrared photonics in silicon and germanium

5. Emerging technologies in Si active photonics

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