Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Author:
Funder
Air Force Office of Scientific Research
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Mid-infrared photonics in silicon and germanium
2. Group IV Photonics: Driving Integrated Optoelectronics
3. Emerging technologies in Si active photonics
4. Lasing in direct-bandgap GeSn alloy grown on Si
5. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
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