Electrically injected GeSn lasers with peak wavelength up to 2.7 μm-Reference-Cited by-同舟云学术

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Published:2021-12-21 Issue:1 Volume:10 Page:222
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Zhou Yiyin^ORCID,Ojo Solomon^ORCID,Wu Chen-Wei,Miao Yuanhao,Tran Huong,Grant Joshua M.,Abernathy Grey,Amoah Sylvester^ORCID,Bass Jake,Salamo Gregory,Du Wei^ORCID,Chang Guo-En^ORCID,Liu Jifeng,Margetis Joe,Tolle John,Zhang Yong-Hang,Sun Greg,Soref Richard A.,Li Baohua,Yu Shui-Qing

Funder

Air Force Office of Scientific Research

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Mid-infrared photonics in silicon and germanium

2. Group IV Photonics: Driving Integrated Optoelectronics

3. Emerging technologies in Si active photonics

4. Lasing in direct-bandgap GeSn alloy grown on Si

5. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

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