Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1846152
Reference13 articles.
1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
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