Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819214
Reference34 articles.
1. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric
2. Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
3. Atomic layer deposition of Al2O3 on S-passivated Ge
4. The effect of Se and Se/Al passivation on the oxidation of Ge
5. Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation;Journal of Semiconductors;2022-01-01
2. Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure;Materials Science in Semiconductor Processing;2020-07
3. Accurate band alignment at the amorphous Al2O3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory;Physical Review Materials;2018-11-30
4. Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing;Surfaces and Interfaces;2017-12
5. Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness;Surface Science;2016-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3