Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
2. Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy
3. Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect
4. Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
5. Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics
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2. Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation;Journal of Semiconductors;2022-01-01
3. Thickness evaluation of AlO x barrier layers for encapsulation of flexible PV modules in industrial environments by normal reflectance and machine learning;Progress in Photovoltaics: Research and Applications;2021-10-18
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