Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3313946
Reference15 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. Direct tunneling leakage current and scalability of alternative gate dielectrics
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4. High dielectric constant oxides
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
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