Study on the growth mechanism of monolayer and few-layer hexagonal boron nitride films on copper foil
Author:
Affiliation:
1. Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China
Abstract
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Link
http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP01930J
Reference23 articles.
1. Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
2. A Review of Scalable Hexagonal Boron Nitride ( h ‐BN) Synthesis for Present and Future Applications
3. A systematic study of the atmospheric pressure growth of large-area hexagonal crystalline boron nitride film
4. Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts
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