Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3564902
Reference22 articles.
1. Germanium channel MOSFETs: Opportunities and challenges
2. Ge based high performance nanoscale MOSFETs
3. Gate dielectric formation and MIS interface characterization on Ge
4. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
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