Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867977
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1. Nanoionics-based resistive switching memories
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4. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
5. Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
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