Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3191674
Reference14 articles.
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4. Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures
5. Reproducible switching effect in thin oxide films for memory applications
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