Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Nagaland 797103, India
2. Department of Physics, College of Science, King Faisal University, Al-Hassa 31982, Saudi Arabia
Funder
Deanship of Scientific Research, King Faisal University
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00452
Reference57 articles.
1. Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
2. Self-Powered Photodetector Based on a Ag Nanoparticle-Decorated Gd2O3 Nanorod
3. Improved photodetection capabilities of Ag@CeO2 Nanorod composite array using GLAD technique
4. Investigation on structural and photodetection properties of Gd2O3 thin films after annealing
5. High Responsivity of GLAD Synthesized Isotype WO3/In2O3 Nanocluster
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