Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p⁺-Si/n-ZnO Heterojunction Memristor-Reference-Cited by-同舟云学术

Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p⁺-Si/n-ZnO Heterojunction Memristor

Published:2023-04 Issue:4 Volume:70 Page:1648-1652
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Song Wenqing¹^ORCID,Yu Hao²,Li Xinmiao¹,Fang Ruihua¹,Zhu Wenhui¹^ORCID,Zhang Lei¹

Affiliation:

1. State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha, China

2. School of Electronic and Electrical Engineering, Zhaoqing University, Duanzhou, Zhaoqing, China

Funder

Natural Science Foundation of Hunan Province

NSFC

Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10049392.pdf?arnumber=10049392

Reference38 articles.

1. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

2. The missing memristor found

3. Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Memristive devices for computing

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