In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure-Reference-Cited by-同舟云学术

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

Published:2013-09-06 Issue:1 Volume:4 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Park Gyeong-Su,Kim Young Bae,Park Seong Yong,Li Xiang Shu,Heo Sung,Lee Myoung-Jae,Chang Man,Kwon Ji Hwan,Kim M.,Chung U-In,Dittmann Regina,Waser Rainer,Kim Kinam

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms3382.pdf

Reference41 articles.

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4. Lee, M. J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nat. Mater. 10, 625–630 (2011).

5. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009).

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