Building a depletion-region width modulation model and realizing memory characteristics in PN heterostructure devices-Reference-Cited by-同舟云学术

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Building a depletion-region width modulation model and realizing memory characteristics in PN heterostructure devices

Published:2024 Issue:33 Volume:16 Page:15722-15729
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Guo Xing¹,Li Xinmiao¹,Wang Ruixiao¹,Zhu Wenhui¹,Wang Liancheng¹,Zhang Lei¹^ORCID

Affiliation:

1. State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha, 410000, China

Abstract

A new depletion-region width modulation model is proposed to realize memory characteristics, and the coexistence of memristive and memcapacitive behaviors is demonstrated in p-CuAlO2/n-ZnO, p+-Si/n-ZnO and p-NiO/n-ZnO heterostructure devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR01666A

Reference44 articles.

1. Memristor-The missing circuit element

2. Resistance switching memories are memristors

3. Memristive devices and systems

4. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

5. The missing memristor found

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