p+-Si/n-ZnO/Ni Heterojunction Optoelectronic Synaptic Device for Visual Memory-Reference-Cited by-同舟云学术

p+-Si/n-ZnO/Ni Heterojunction Optoelectronic Synaptic Device for Visual Memory

Published:2023-11 Issue:11 Volume:70 Page:5997-6003
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xinmiao¹^ORCID,Yu Hao²,Fang Ruihua¹,Lv Yinghao¹,Zhou Zan¹,Song Wenqing³,Zhang Lei¹^ORCID

Affiliation:

1. State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha, China

2. School of Electronic and Electrical Engineering, Zhaoqing University, Duanzhou, Zhaoqing, China

3. School of Intelligent Manufacturing and Mechanical Engineering, Hunan Institute of Technology, Hengyang, China

Funder

NSFC

Natural Science Foundation of Hunan Province, China

Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China

Innovation-Driven Project of Central South University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10278446.pdf?arnumber=10278446

Reference41 articles.

1. Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

2. All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

3. Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament