In situ sensor for interstitial trapping during Si thermal oxidation using He implantation-induced voids
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1426693
Reference6 articles.
1. Stoichiometry of thin silicon oxide layers on silicon
2. Low‐energy ion‐scattering spectrometry (ISS) of the SiO2/Si interface
3. An ESCA Study of the Oxide at the Si ‐ SiO2 Interface
4. Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films
5. Voids in Silicon by He Implantation: From Basic to Applications
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1. The effects of the annealing time on helium implantation in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-11
2. Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation;Journal of Applied Physics;2009-11-15
3. Achieving a narrow size distribution of Au particles at a precise depth in SiO2by segregation of Au precipitates;Nanotechnology;2009-04-15
4. The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient;Journal of Materials Science: Materials in Electronics;2006-12-21
5. Functional voids by gas ion implantation for applications in semiconductor processing;MRS Proceedings;2002
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