Abstract
AbstractThe recent work in the field is reviewed and some new applications are reported. In particular we review some aspects where new contributions have been added. The mechanism of bubble formation when He is implanted into silicon is described till the supersaturation of vacancies (void formation). The void evolution has been described considering direct coalescence or Ostwald ripening. Applications such as gettering, lifetime control, and more recently nanosensors for interstitials are critically discussed.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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