The effects of the annealing time on helium implantation in Si-Reference-Cited by-同舟云学术

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The effects of the annealing time on helium implantation in Si

Published:2010-11 Issue:21 Volume:268 Page:3390-3394
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Li B.S.,Zhang C.H.,Zhang H.H.,Yang Y.T.,Zhou L.H.,Zhang L.Q.,Zhang Y.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference33 articles.

1. Helium in silicon: Thermal-desorption investigation of bubble precursors

2. Electrical properties of He-implantation-produced nanocavities in silicon

3. Hydrogen interactions with cavities in helium-implanted silicon

4. Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions

5. Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice disorder and N elemental segregation in ion implanted GaN epilayer;Applied Surface Science;2020-01

2. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10

3. Microstructural evolution upon annealing in Ar-implanted Si;Applied Surface Science;2011-08

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