Stoichiometry of thin silicon oxide layers on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655112
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1. Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in silicon
2. Determination of the Properties of Films on Silicon by the Method of Ellipsometry
3. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
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