The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348603
Reference9 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Low-thermal-budget process modeling with the PREDICT computer program
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4. Elimination of end‐of‐range and mask edge lateral damage in Ge+preamorphized, B+implanted Si
5. The nature of defect layer formation for arsenic ion implantation
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