1. C. Ortolland, E. Rosseel, N. Horiguchi, C. Kerner, S. Mertens, J. Kittl, E. Verleysen, H. Bender, W. Vandervost, A. Lauwers, P. P. Absil, S. Biesemans, S. Muthukrishnan, S. Srinivasan, A. J. Mayur, R. Schreutelkamp, and T. Hoffmann, in International Electron Devices Meeting, Baltimore, America, 7–9 December 2009, p. 23.
2. Influence of temperature and backside roughness on the emissivity of Si wafers during rapid thermal processing