MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing-Reference-Cited by-同舟云学术

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

Published:2021 Issue:7 Volume:9 Page:2258-2275
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wu Jintong¹²³⁴^ORCID,Xu Zongwei¹²³⁴^ORCID,Liu Lei¹²³⁴,Hartmaier Alexander⁵⁶⁷,Rommel Mathias⁸⁷^ORCID,Nordlund Kai⁹¹⁰¹¹,Wang Tao⁵⁶⁷,Janisch Rebecca⁵⁶⁷^ORCID,Zhao Junlei¹²¹³¹⁴⁴^ORCID

Affiliation:

1. State Key Laboratory of Precision Measuring Technology & Instruments

2. Laboratory of Micro/Nano Manufacturing Technology

3. Tianjin University

4. China

5. Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)

6. Ruhr-University Bochum

7. Germany

8. Fraunhofer Institute for Integrated Systems and Device Technology IISB

9. Department of Physics

10. University of Helsinki

11. Finland

12. Department of Electrical and Electronic Engineering

13. Southern University of Science and Technology

14. Shenzhen

Abstract

For the first time, the doping efficiency and defect evolution of p-type doping by aluminum in SiC are clarified and distinguished by an MD study.

Funder

National Natural Science Foundation of China

Chinesisch-Deutsche Zentrum für Wissenschaftsförderung

National Key Research and Development Program of China

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05374K

Reference92 articles.

1. Investigation on the Wetting Behavior of 3C-SiC Surfaces: Theory and Modeling

2. Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H–SiC

3. Selective doping of 4H–SiC by codiffusion of aluminum and boron

4. Photoluminescence and transport studies of boron in 4H SiC

5. Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

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