Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC-Reference-Cited by-同舟云学术

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Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

Published:2020-09 Issue:3 Volume:3 Page:205-217
ISSN:2520-811X
Container-title:Nanomanufacturing and Metrology
language:en
Short-container-title:Nanomanuf Metrol

Author:

Song Ying,Xu Zongwei,Li Rongrong,Wang Hong,Fan Yexin,Rommel Mathias,Liu Jiayu,Astakhov Georgy V.,Hlawacek Gregor,Li Bingsheng,Xu Jun,Fang Fengzhou

Publisher

Springer Science and Business Media LLC

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Materials Science (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1007/s41871-020-00061-8.pdf

Reference41 articles.

1. Doherty MW, Manson NB, Delaney P, Jelezko F, Wrachtrup J, Hollenberg LCL (2013) The nitrogen-vacancy colour centre in diamond. Phys Rep 528(1):1–45

2. Awschalom DD, Hanson R, Wrachtrup J, Zhou BB (2018) Quantum technologies with optically interfaced solid-state spins. Nat Photonics 12(9):516–527

3. Luo H, Xu Z, Shi C, Hu M, Sun F, Shang L, Fang F (2019) Nanofabrication of nitrogen-vacancy color center. Curr Nanosci 15(5):433–436

4. Yang X, Yang X, Sun R, Kawai K, Arima K, Yamamura K (2019) Obtaining atomically smooth 4H–SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing. Nanomanuf Metrol 2(3):140–147

5. Zhai W, Gao B, Chang J, Wang H (2019) Optimization of ultrasonic-assisted polishing SiC through CFD simulation. Nanomanuf Metrol 2(1):36–44

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3. Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses;Materials Science in Semiconductor Processing;2024-04

4. Ultralong‐Term High‐Density Data Storage with Atomic Defects in SiC;Advanced Functional Materials;2024-03-04

5. Molecular insights into vacancy defect formation in silicon anodes induced by femtosecond laser;Materials Today Communications;2024-03

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