Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement-Reference-Cited by-同舟云学术

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Author:

Dong Bin¹²,Lin Jie¹²,Wang Ning¹²,Jiang Ling-li¹²,Liu Zong-dai¹²,Hu Xiaoyan¹²,Cheng Kai³,Yu Hong-yu¹²

Affiliation:

1. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China

2. Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, Shenzhen, China

3. Enkris Semiconductor Inc., NW-20v, Nanopolis Suzhou, 99 Jinji Avenue, 215123, Suzhou, China

Funder

the fundamental research project of science and technology plan of shenzhen

the key laboratories of third-generation semiconductor devices in shen zhen, PRCHINA

key technology development of Si based GaN power devices

the project of energy-efficient si based GaN power devices

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference28 articles.

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