System-level evaluation of dynamic effects in a GaN-based class-E power amplifier
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Software
Reference24 articles.
1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron. Dev.,2017
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,1999
3. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate;Hu;Electron. Lett.,2000
4. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications;De Santi;IET Power Electron.,2018
5. Leaky dielectric model for the suppression of dynamic RON in carbon-doped AlGaN/GaN HEMTs;Uren;IEEE Trans. Electron. Dev.,2017
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