Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs
Author:
Funder
Defence Research and Development Organisation
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference45 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs;Binari;IEEE Trans. Electron. Dev.,2001
2. Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method;Meneghini;IEEE Trans. Electron. Dev.,2011
3. Mechanism of current leakage through metal/n-GaN interfaces;Oyama;Appl. Surf. Sci.,2002
4. Large gate leakage current in AlGaN/GaN high electron mobility transistors;Mizuno;Jpn. J. Appl. Phys.,2002
5. Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs;Ghosh;IEEE Trans. Electron. Dev.,2014
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