Abstract
Abstract
We report on the leakage current mechanism in a blue GaN-based light-emitting diode (LED). The device structure was grown by the MOCVD technique on a sapphire substrate. The LED was characterized through various measurements including current-voltage, electroluminescence, and secondary ion mass spectroscopy (SIMS). Capacitance-voltage measurements were employed to calculate the depletion layer thickness at different bias voltages and to analyze the doping profile in the active layer. The reverse temperature-dependent current-voltage measurements were carried out to study the leakage mechanism. The leakage current was explained by phonon-assisted tunneling of charge carriers through deep trap states. The trap energy and density of states were extracted from the application of the introduced model. Cathodoluminescence measurements were performed to evaluate the density of dislocations, which were then compared to x-ray diffraction measurements. The determined value was close to the density of states obtained from the tunneling model.