A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4748169
Reference15 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
3. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
4. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
5. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
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1. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices;Applied Physics Letters;2021-07-12
2. Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs;Modern Physics Letters B;2020-09-18
3. Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes;Applied Physics A;2015-09-29
4. A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors;Applied Physics Letters;2015-09-14
5. Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures;Applied Physics Letters;2015-08-03
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